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HAF2015RJ
Silicon N Channel MOS FET Series Power Switching
REJ03G1141-0300 Rev.3.00 Aug 27, 2007
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
* * * * * Logic level operation (5 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Temperature hysteresis type. High density mounting.
Outline
RENESAS Package code: PRSP0008DD-A (Package name: SOP-8 )
87 65
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 )
87 65 1, 3 2, 4 5, 6, 7, 8 Source Gate Drain
12
34
12
34
D 7
D 8
D 5
D 6
2 G Tmperature sensing circuit Gate resistor Self return circuit Gate shutdown circuit G
4 Gate resistor Tmperature sensing circuit Self return circuit Gate shutdown circuit
1 MOS1 S MOS2 S
3
REJ03G1141-0300 Rev.3.00 Aug 27, 2007 Page 1 of 9
HAF2015RJ
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. 2. 3. 4. Symbol VDSS VGSS VGSS ID ID (pulse) Note 1 IDR IAP Note 4 EAR Note 4 Pch Note 2 Pch Note 3 Tch Tstg Value 60 16 -2.5 2 4 2 0.54 25 2 1.5 150 -55 to +150 Unit V V V A A A A mJ W W C C
PW 10 s, duty cycle 1% 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s Tch = 25C, Rg > 50
Typical Operation Characteristics
Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Hysteresis temperature Gate operation voltage Symbol VIH VIL IIH1 IIH2 IIL IIH (sd) 1 IIH (sd) 2 Tsd Thr VOP Min 3.5 -- -- -- -- -- -- -- -- 3.5 Typ -- -- -- -- -- 0.53 0.2 175 120 -- Max -- 1.2 100 50 1 -- -- -- -- 12 Unit V V A A A mA mA C C V Test Conditions
Vi = 5 V, VDS = 0 Vi = 3.5 V, VDS = 0 Vi = 1.2 V, VDS = 0 Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Channel temperature Channel temperature
REJ03G1141-0300 Rev.3.00 Aug 27, 2007 Page 2 of 9
HAF2015RJ
Electrical Characteristics
(Ta = 25C)
Item Drain current Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol ID1 ID2 V (BR) DSS V (BR) GSS V (BR) GSS IGSS1 IGSS2 IGSS3 IGSS4 IGS (op) 1 IGS (op) 2 IDSS1 IDSS2 VGS (off) RDS (on) RDS (on) |yfs| Coss td (on) tr td (off) tf VDF trr tos1 Min 0.7 -- 60 16 -2.5 -- -- -- -- -- -- -- -- 1.4 -- -- 0.5 -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- -- -- 0.53 0.2 -- -- -- 130 110 2.5 139 4.2 20 1 1 0.82 55 15 Max -- 10 -- -- -- 100 50 1 -100 -- -- 10 10 2.5 200 160 -- -- -- -- -- -- -- -- -- Unit A mA V V V A A A A mA mA A A V m m S pF s s s s V ns ms Test Conditions VGS = 3.5 V, VDS = 2 V VGS = 1.2 V, VDS = 2 V ID = 10 mA, VGS = 0 IG = 500 A, VDS = 0 IG = -100 A, VDS = 0 VGS = 5 V, VDS = 0 VGS = 3.5 V, VDS = 0 VGS = 1.2 V, VDS = 0 VGS = -2.4 V, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 48 V, VGS = 0 Ta = 125C ID = 1 mA, VDS = 10 V ID = 1 A, VGS = 5 V Note 5 ID = 1 A, VGS = 10 V Note 5 ID = 1 A, VDS = 10 V Note 5 VDS = 10 V, VGS = 0 f = 1 MHz ID = 1 A VGS = 5 V RL = 30 IF = 2 A, VGS = 0 IF = 2 A, VGS = 0 diF/dt = 50 A/s VGS = 5 V, VDD = 16 V
Input current (shut down) Zero gate voltage drain current
Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Over load shut down operation time Note6
Notes: 5. Pulse test 6. Including the junction temperature rise of the over loaded condition.
REJ03G1141-0300 Rev.3.00 Aug 27, 2007 Page 3 of 9
HAF2015RJ
Main Characteristics
Power vs. Temperature Derating
4.0
50
Test Condition: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW < 10 s
Maximum Safe Operation Area
Thermal shut down 20 Operation area
Pch (W)
10
ID (A)
0
3.0
10 5
1 m
s
Channel Dissipation
Drain Current
2
2.0
2 Dr
DC
1.0
1D
ive
riv
eO
Op e
pe
rat
ion
ra tio n
0 0 50 100 150
200
1 Operation in 10 er at ms 0.5 this area is ion (P limited by RDS (on) W Note 0.2 10 7 Ta = 25C s) 0.1 1 shot pulse 0.05 1 Drive Operation 0.03 0.3 0.5 1 2 5 10 20 50 100
Op
PW
s
=
Ambient Temperature Ta (C)
Drain to Source Voltage VDS (V)
Note 7: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
Typical Output Characteristics
5
10 V
Typical Transfer Characteristics
2.5
Pulse Test
ID (A)
ID (A)
4
8V 6V 5V
2.0
Tc = -25C 25C 75C
3
1.5 4V
Drain Current
Drain Current
2 VGS = 3.5 V 1
1.0
0.5 VDS = 10 V Pulse Test
0 0 2 4 6 8 10
0 0 1 2 3 4
5
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS (on) (V)
0.25
Pulse Test
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source on State Resistance RDS (on) (m)
500
0.20
200 100
VGS = 5 V 10 V
0.15 ID = 1 A 0.10 0.5 A 0.05 0.2 A 0 0 2 4 6 8 10
50
20
Pulse Test 10 0.1 0.2 0.5
1
2
5
10
20
Gate to Source Voltage VGS (V)
Drain Current
ID (A)
REJ03G1141-0300 Rev.3.00 Aug 27, 2007 Page 4 of 9
HAF2015RJ
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance |yfs| (S)
0.25 Pulse Test
ID = 1 A
10 5
Tc = -25C
Static Drain to Source on State Resistance RDS (on) (m)
Forward Transfer Admittance vs. Drain Current
VDS = 10 V Pulse Test 25C
0.5 A
0.2 A
0.20 VGS = 5 V
0.15
ID = 1 A 0.2 A
0.5 A
2 1
75C
0.10 10 V 0.05
0.5
0.2 0.1 0.05 0.1
0 -40
0
40
80
120
160
0.2
0.5
1
2
5
Case Temperature
Tc (C)
Drain Current ID (A)
Body-Drain Diode Reverse Recovery Time
Reverse Recovery Time trr (ns)
500
100
Switching Characteristics
VGS = 5 V, VDD = 30 V 50 PW = 300 s, duty 1 %
200 100 50
Switching Time t (s)
20 10 5 2 1
tr
td(on)
20
di / dt = 50 A / s VGS = 0, Ta = 25C 0.5 1 2 5
td(off)
tf
10 0.01 0.02 0.05 0.1 0.2
0.5 0.01 0.02 0.05 0.1 0.2
0.5 1
2
5
Reverse Drain Current
IDR (A)
Drain Current
ID (A)
Reverse Drain Current vs. Source to Drain Voltage
5
Typical Capacitance vs. Drain to Source Voltage
1000
Reverse Drain Current IDR (A)
Pulse Test
VGS = 5 V
Capacitance C (pF)
4
300
3
0V
100
2
1
30
VGS = 0 f = 1 MHz
0 0 0.4 0.8 1.2 1.6 2.0
10
0
10
20
30
40
50
Source to Drain Voltage VSD (V)
Drain to Source Voltage VDS (V)
REJ03G1141-0300 Rev.3.00 Aug 27, 2007 Page 5 of 9
HAF2015RJ
Gate to Source Voltage vs. Shutdown Time of Load-Short Test
VGS (V)
12 10 8 6 4 2 0 0.0001
Shutdown Case Temperature vs. Gate to Source Voltage
Shutdown Case Temperature Tc (C)
200
180
Gate to Source Voltage
VDD = 16 V
160
140
120 ID = 0.2 A 100 0 2 4 6 8 10
0.001
0.01
0.1
1
Shutdown Time of Load-Short Test PW (S)
Normalized Transient Thermal Impedance s (t)
10
Gate to Source Voltage
VGS (V)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
1
D=1 0.5
0.1
0.2
0.1
0.05
0.01
0.02 0.01
ch - f (t) = s (t) * ch - f ch - f = 125C/W, Ta = 25C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
0.001
1s
ho
tp
e uls
PDM PW T 1m 10 m 100 m 1 10 100
D=
PW T
0.0001 10
100
1000
10000
Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
Normalized Transient Thermal Impedance s (t)
10
1
D=1 0.5
0.1
0.2
0.1
0.05
0.01
0.02 0.01
ch - f (t) = s (t) * ch - f ch - f = 166C/W, Ta = 25C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
0.001
1s
ho
t
ls pu
e
PDM PW T 1m 10 m 100 m 1 10 100
D=
PW T
0.0001 10
100
1000
10000
Pulse Width PW (S)
REJ03G1141-0300 Rev.3.00 Aug 27, 2007 Page 6 of 9
HAF2015RJ
Switching Time Test Circuit
Waveform
Vin Monitor D.U.T. RL
Vout Monitor
90% 10% 10% 10%
Vin Vout
Vin 5V
50
VDD = 30 V
90% td(on) tr
90% td(off) tf
REJ03G1141-0300 Rev.3.00 Aug 27, 2007 Page 7 of 9
HAF2015RJ
Package Dimensions
Package Name SOP-8
JEITA Package Code P-SOP8-3.95 x 4.9-1.27
RENESAS Code PRSP0008DD-A
Previous Code FP-8DA
MASS[Typ.] 0.085g
*1 D
8 5
F
bp b1
*2 E
HE
Index mark
1 Z
4
Terminal cross section
c1 c
*3
bp
xM
NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.
e
L1
Reference Symbol
Dimension in Millimeters
Min
L
Detail F
D E A2 A1 A bp b1 c c1 HE e x y Z L L1
Nom Max 4.90 5.3 3.95
y
0.10 0.14 0.25 1.75 0.34 0.42 0.50 0.40 0.19 0.22 0.25 0.20 0 8 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08
Package Name SOP-8
JEITA Package Code P-SOP8-3.95 x 4.9-1.27
RENESAS Code PRSP0008DD-D
Previous Code FP-8DAV
*1 D
F
A1
MASS[Typ.] 0.085g
A
8
5
*2 E
HE
bp
Index mark
1
Z
4
* 3 bp
xM
c
Terminal cross section
(Ni/Pd/Au plating)
NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.
e
Reference Symbol
Dimension in Millimeters
Min
L1
L
D E A2 A1 A bp b1 c c1 HE e x y Z L L1
Nom Max 4.90 5.3 3.95
A
0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25
A1
y
Detail F
0 8 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08
REJ03G1141-0300 Rev.3.00 Aug 27, 2007 Page 8 of 9
HAF2015RJ
Ordering Information
Part No. HAF2015RJ-EL Quantity 2500 pcs/Reel Shipping Container Embossed tape
REJ03G1141-0300 Rev.3.00 Aug 27, 2007 Page 9 of 9
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